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Indirect electric field doping of the CuO2 planes of the cuprate NdBa2Cu3O7 superconductor

Academic Article
Publication Date:
2008
abstract:
The mechanism of field-effect doping in the 123 high critical temperature superconductors (HTS) has been investigated by x-ray absorption spectroscopy in the presence of an electric field. We demonstrate that holes are created at the CuO chains of the charge reservoir and that field-effect doping of the CuO2 planes occurs by charge transfer, from the chains to the planes, of a fraction of the overall induced holes. The electronic properties of the charge reservoir and of the dielectric-HTS interface determine the electric field doping of the CuO2 planes.
Iris type:
01.01 Articolo in rivista
Keywords:
Electric field effect; field effect transistor; X.ray Absorption spectroscopy; THIN-FILMS; YBA2CU3O7-DELTA FILMS; SYSTEMS
List of contributors:
Vaglio, Ruggero; Ghiringhelli, Giacomo; DE LUCA, GABRIELLA MARIA; Salluzzo, Marco
Authors of the University:
SALLUZZO MARCO
Handle:
https://iris.cnr.it/handle/20.500.14243/457670
Published in:
PHYSICAL REVIEW LETTERS (PRINT)
Journal
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URL

http://link.aps.org/doi/10.1103/PhysRevLett.100.056810
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