Data di Pubblicazione:
2008
Abstract:
The mechanism of field-effect doping in the 123 high critical temperature superconductors (HTS) has been investigated by x-ray absorption spectroscopy in the presence of an electric field. We demonstrate that holes are created at the CuO chains of the charge reservoir and that field-effect doping of the CuO2 planes occurs by charge transfer, from the chains to the planes, of a fraction of the overall induced holes. The electronic properties of the charge reservoir and of the dielectric-HTS interface determine the electric field doping of the CuO2 planes.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
Electric field effect; field effect transistor; X.ray Absorption spectroscopy; THIN-FILMS; YBA2CU3O7-DELTA FILMS; SYSTEMS
Elenco autori:
Vaglio, Ruggero; Ghiringhelli, Giacomo; DE LUCA, GABRIELLA MARIA; Salluzzo, Marco
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