Very low energy implanted Bragg gratings in SOI for wafer scale testing applications

Conference Paper
Publication Date:
2011
abstract:
We present Bragg gratings with an effective index change introduced by implanting germanium at only 15KeV. An extinction ratio of 35dB at 1350nm is demonstrated for device lengths of 600?m, furthermore laser annealing is demonstrated. © 2011 IEEE.
Iris type:
04.01 Contributo in Atti di convegno
Keywords:
ion implantation; Bragg gratings; SOI; optoelectronics
List of contributors:
Handle:
https://iris.cnr.it/handle/20.500.14243/312527
Published in:
IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (PRINT)
Series