Very low energy implanted Bragg gratings in SOI for wafer scale testing applications

Contributo in Atti di convegno
Data di Pubblicazione:
2011
Abstract:
We present Bragg gratings with an effective index change introduced by implanting germanium at only 15KeV. An extinction ratio of 35dB at 1350nm is demonstrated for device lengths of 600?m, furthermore laser annealing is demonstrated. © 2011 IEEE.
Tipologia CRIS:
04.01 Contributo in Atti di convegno
Keywords:
ion implantation; Bragg gratings; SOI; optoelectronics
Elenco autori:
Link alla scheda completa:
https://iris.cnr.it/handle/20.500.14243/312527
Pubblicato in:
IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (PRINT)
Series