Publication Date:
2006
abstract:
The effects of ion irradiation defects on the carrier concentration of 6H-SiC epitaxial layer were studied by current-voltage (I-V), capacitance.-voltage (C-V) measurements, thermally stimulated capacitance and deep level transient spectroscopy. The defects were produced by irradiation with 10 MeV C+ at a fluence of 10(11) ions/cm(2) supercript stop and subsequent thermal annealings were carried out in the temperature range 500-1700 K under N-2 flux.
Iris type:
01.01 Articolo in rivista
Keywords:
ion implantation; silicon carbide; defects
List of contributors:
Roccaforte, Fabrizio
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