Effects of implantation defects on the carrier concentration of 6H-SiC

The effects of ion irradiation defects on the carrier concentration of 6H-SiC epitaxial layer were studied by current-voltage (I-V), capacitance.-voltage (C-V) measurements, thermally stimulated capacitance and deep level transient spectroscopy. The defects were produced by irradiation with 10 MeV C+ at a fluence of 10(11) ions/cm(2) supercript stop and subsequent thermal annealings were carried out in the temperature range 500-1700 K under N-2 flux.