Publication Date:
2006
abstract:
We present a theory of full counting statistics for electron transport through interacting electron systems with non-Markovian dynamics. We illustrate our approach for transport through a single-level quantum dot and a metallic single-electron transistor to second order in the tunnel coupling, and discuss under which circumstances non-Markovian effects appear in the transport properties.
Iris type:
01.01 Articolo in rivista
Keywords:
SINGLE-ELECTRON TRANSISTOR; ZERO-BIAS ANOMALIES; QUANTUM SHOT-NOISE; CHARGE; TRANSPORT
List of contributors:
Fazio, Rosario; Braggio, Alessandro
Published in: