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Full counting statistics in strongly interacting systems: Non-Markovian effects

Articolo
Data di Pubblicazione:
2006
Abstract:
We present a theory of full counting statistics for electron transport through interacting electron systems with non-Markovian dynamics. We illustrate our approach for transport through a single-level quantum dot and a metallic single-electron transistor to second order in the tunnel coupling, and discuss under which circumstances non-Markovian effects appear in the transport properties.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
SINGLE-ELECTRON TRANSISTOR; ZERO-BIAS ANOMALIES; QUANTUM SHOT-NOISE; CHARGE; TRANSPORT
Elenco autori:
Fazio, Rosario; Braggio, Alessandro
Autori di Ateneo:
BRAGGIO ALESSANDRO
Link alla scheda completa:
https://iris.cnr.it/handle/20.500.14243/170152
Pubblicato in:
PHYSICAL REVIEW LETTERS (PRINT)
Journal
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URL

http://link.aps.org/doi/10.1103/PhysRevLett.96.026805
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