DLTS and PL studies of proton radiation defects in tin-doped FZ silicon

In this paper, deep level transient spectroscopy (DLTS) is applied to study the deep levels in tin-doped and highenergy proton irradiated n-type float-zone (FZ) silicon. The results will be compared with irradiated tin-free FZ reference material, in order to evaluate the hardening potential. It will be shown that in Sn-doped silicon (FZ:Sn), a number of additional deep levels can be observed, two of which have been identi.ed as acceptors associated with Sn-V. Furthermore, optically active recombination centres have been probed by photoluminescence (PL) spectroscopy. The PL results con.rm the reduction of electrically active radiation-defect formation in FZ:Sn. At the same time, no Snrelated optically active centres have been found so far.