Strain Characterisation at the nm Scale of Deep Sub-Micron Devices by Convergent-Beam Electron Diffraction

Conference Paper

Publication Date:

2002

Iris type:

04.01 Contributo in Atti di convegno

Keywords:

electron diffraction; process simulation; silicon devices; strain; stress

List of contributors:

Authors of the University:

BALBONI ROBERTO

Handle:

Book title:

GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY

Published in:

Journal