Enhanced photoluminescence from InP deposited and treated by remote plasma processes
Academic Article
Publication Date:
1997
abstract:
Photoluminescence (PL) spectra of InP epilayers grown and treated by plasma assisted MOCVD processes are presented. Defect passivation by hydrogen and microclustering are the main plasma related phenomena.
Iris type:
01.01 Articolo in rivista
List of contributors:
Losurdo, Maria
Published in: