Enhanced photoluminescence from InP deposited and treated by remote plasma processes

Articolo
Data di Pubblicazione:
1997
Abstract:
Photoluminescence (PL) spectra of InP epilayers grown and treated by plasma assisted MOCVD processes are presented. Defect passivation by hydrogen and microclustering are the main plasma related phenomena.
Tipologia CRIS:
01.01 Articolo in rivista
Elenco autori:
Link alla scheda completa:
https://iris.cnr.it/handle/20.500.14243/5648
Pubblicato in:
JOURNAL OF LUMINESCENCE
Journal