High luminescence in small SiOSiO2 nanocrystals: A theoretical study

In recent years, many experiments have demonstrated the possibility to achieve efficient photoluminescence from Si/SiO2 nanocrystals. While it is widely known that only a minor portion of the nanocrystals in the samples contributes to the observed photoluminescence, the high complexity of the Si/SiO2 interface and the dramatic sensitivity to the fabrication conditions make the identification of the most active structures at the experimental level not a trivial task. Focusing on this aspect, we have addressed the problem theoretically, by calculating the radiative recombination rates for different classes of Si nanocrystals in the diameter range of 0.2-1.5 nm, in order to identify the best conditions for optical emission. We show that the recombination rates of hydrogenated nanocrystals follow the quantum confinement feature in which the nanocrystal diameter is the principal quantity in determining the system response. Interestingly, a completely different behavior emerges from the OH-terminated or SiO2-embedded nanocrystals, where the number of oxygens at the interface seems intimately connected to the recombination rates, resulting the most important quantity for the characterization of the optical yield in such systems. Besides, additional conditions for the achievement of high rates are constituted by a high crystallinity of the nanocrystals and by high confinement energies small diameters.