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Mesoscopic capacitor effect in GaN/AlGaN quantum wells: effects on the electronic states

Articolo
Data di Pubblicazione:
2001
Abstract:
We show that wide GaN quantum wells behave Like mesoscopic capacitors. The electron-hole pairs are separated by the spontaneous and piezoelectric polarization fields and accumulated in the well, resulting in a well-width dependent screening of the built-in field. The extent to which such screening is effective depends on the interplay between radiative and nonradiative recombination probabilities, which deplete the ground level of the quantum well, causing the recovery of the unscreened built-in field. The account of the mesoscopic capacitor effect provides a quantitative description of the optical spectra and of the time dynamics of a set of high quality quantum wells with well characterized structural parameters.
Tipologia CRIS:
01.01 Articolo in rivista
Elenco autori:
Natali, MARCO STEFANO
Autori di Ateneo:
NATALI MARCO STEFANO
Link alla scheda completa:
https://iris.cnr.it/handle/20.500.14243/122223
Pubblicato in:
PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS (ONLINE)
Journal
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