Publication Date:
2000
abstract:
We show that wide GaN quantum wells behave like mesoscopic capacitors. The electron-hole pairs, are separated by the spontaneous and piezoelectric polarization fields and accumulated in the well. resulting in a well width dependent screening of the built-in field.
Iris type:
04.01 Contributo in Atti di convegno
List of contributors:
Lomascolo, Mauro; Passaseo, ADRIANA GRAZIA
Book title:
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS