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Mesoscopic capacitor effect in GaN/AlGaN quantum wells

Conference Paper
Publication Date:
2000
abstract:
We show that wide GaN quantum wells behave like mesoscopic capacitors. The electron-hole pairs, are separated by the spontaneous and piezoelectric polarization fields and accumulated in the well. resulting in a well width dependent screening of the built-in field.
Iris type:
04.01 Contributo in Atti di convegno
List of contributors:
Lomascolo, Mauro; Passaseo, ADRIANA GRAZIA
Authors of the University:
LOMASCOLO MAURO
PASSASEO ADRIANA GRAZIA
Handle:
https://iris.cnr.it/handle/20.500.14243/122212
Book title:
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS
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