Data di Pubblicazione:
2000
Abstract:
We show that wide GaN quantum wells behave like mesoscopic capacitors. The electron-hole pairs, are separated by the spontaneous and piezoelectric polarization fields and accumulated in the well. resulting in a well width dependent screening of the built-in field.
Tipologia CRIS:
04.01 Contributo in Atti di convegno
Elenco autori:
Lomascolo, Mauro; Passaseo, ADRIANA GRAZIA
Link alla scheda completa:
Titolo del libro:
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS