PANI-CSA: An easy method to avoid ITO photolithography in PLED manufacturing

In order to optimize polymer light emitting diode (PLED) performances, devices with holes injected through an Indium Tin Oxide (ITO) / Polyaniline (PANI) electrode into the polymer are much more efficient than devices fabricated with the anode made only by ITO. We demonstrated that by using doped PANI as hole injection layer in a polymer light emitting diode the manufg. process can become simpler. Indeed, the pattern of conductive layer can be produced without ITO photolithog. by UV exposition. As hole transporter layer, Poly(N-vinylcarbazole) (PVK) was spin coated over the doped PANI layer and a layer of tris (8-hydroxy) quinoline aluminum (Alq3) was then thermally evapd. so as to form the electron transport layer. To complete the device structure, Aluminum contacts were deposited onto the org. layers by vacuum evapn. at low pressure. The layers were characterized by x-ray small-angle diffraction, IR Raman and UV-Vis spectroscopies. Devices without PANI and with PANI as HIL were studied