Analytical prediction of the cross-over point in the temperature coefficient of the forward characteristics of 4H-SiC p⁺-i-n diodes

Forward J-V curves of 4H-SiC p-i-n diodes are analyzed by means of an analytical model in order to justify the presence of a crossing-point. The interlacing behaviour occurring in the J-V curves of 4H-SiC diodes at different temperatures is predicted by a simple formula, which can be used for a first-order design of such devices. Numerical simulation of diodes designed with different epilayer thickness and carrier lifetime values have been used in order to analyze the crossing-point behaviour. Comparisons with experimental data confirm the analytic and simulated results.