Energy levels quantization in underdamped Nb/AlOx/Nb Josephson junctions

Macroscopic quantum effects in Josephson systems have recently attracted interest in the scientific community both for the physics involved and in view of applications. Here we present experiments on the presence of energy level quantization at temperatures above the classical-quantum regime crossover temperature in different Josephson junctions. This has been possible by extending the measurements of the escape rate out of the zero-voltage state at higher sweeping bias rate (dI/dt up to 100 A/sec) in order to induce nonstationary conditions in the energy potential describing the junction dynamics. Our measurements allow us to obtain as fitting parameter the "effective" resistance to be used in the RSJ model which is compatible with the subgap resistance at very low voltage. The very low dissipation level obtained at low temperatures renders our results quite interesting in view of applications in the quantum limit.