Data di Pubblicazione:
2015
Abstract:
The structural transformations occurring in Ge2Sb2Te5 films heated at temperature up to 400 °C,
and under hydrostatic pressure up to 12 GPa, have been investigated through in-situ X ray
diffraction measurements. The adopted experimental conditions are close to those experienced by
the phase change material during the SET (crystallization)/RESET (amorphization) processes in a
nonvolatile memory device. The compression enhances the thermal stability of the amorphous
phase, which remains stable up to 180 °C at 8 GPa and to 230 °C at 12 GPa. The structure of the
crystalline phases is also modified, with the formation of a CsCl-type structure instead of rock-salt
and of a GeS-type structure at the temperature at which usually the trigonal stable phase is formed.
Overall, the stability of the stable phase appears to be more affected by the compression. We argue
that the presence of weak bonds associated to the van der Waals gaps is a determining factor for
the observed reduced stability.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
ternary compounds; micro-electronics; matter under extreme conditions; X-ray diffraction
Elenco autori:
Bini, Roberto; Rimini, Emanuele; D'Arrigo, GIUSEPPE ALESSIO MARIA; Miritello, MARIA PILAR; Privitera, STEFANIA MARIA SERENA; Santoro, Mario; Mio, ANTONIO MASSIMILIANO; Gorelli, FEDERICO AIACE
Link alla scheda completa:
Pubblicato in: