Structural and electrical investigation of high temperature Fe implanted GaInP layers lattice matched to GaAs

Single GaInP layers, grown by MOVPE lattice matched to GaAs are examined. The role of the implantation temperature and dose in determining the crystal damage, and the recovery of this damage by the following high temperature annealing treatments is investigated by RBS-channeling measurements. The influence of implant and annealing conditions on the redistribution properties of the Fe atoms throughout the crystal is studied by means of SIMS Fe depth profiling. High-resolution X-ray diffraction measurements are employed for structural characterization. The electrical properties related to Fe implantation are studied by current-voltage measurements on mesa devices. Deep level properties are investigated by DLTS-PICTS measurements.