ON THE EPITAXIAL RELATIONSHIPS OF TISI2 ON SILICON

A structural study on the epitaxial relationships of TiSi2 on <100 > silicon has been carried out by transmission electron microscopy. Metallic films, heat treated at high temperatures (750 and 850°C), react with silicon forming the orthorhombic TiSi2 phase with quite large grains, up to 5 µm in diameter, which present some orientation relationships with the crystalline bulk. They are [011]TiSi2//[001]Si, [110]TiSi2//[001]Si, [010]TiSi2//[001]Si.