Charging Effects and related Equivalent Circuits for Ohmic Series and Shunt Capacitive RF MEMS Switches
Conference Paper
Publication Date:
2008
abstract:
Abstract -- Charging effects in dielectrics are currently
considered as the major limiting factor for the reliability of
RF MEMS switches. In this paper, an ohmic series switch
and a shunt capacitive one are studied for modeling the
charging contributions due to the actuation pads used for
the electrostatic actuation of the device. For simulation
purposes, a lumped circuit based on equivalent capacitances
can be defined.
Iris type:
04.01 Contributo in Atti di convegno
Keywords:
RF MEMS; Charging
List of contributors:
Catoni, Simone; DE ANGELIS, Giorgio; Bartolucci, Giancarlo; Proietti, Emanuela; Lucibello, Andrea; Marcelli, Romolo
Book title:
Proceedings of the 9th International Symposium on RF MEMS and RF Microsystems, MEMSWAVE 2008