High-resolution X-ray diffraction by end of range defects in self-amorphized Ge

In this study we detected the positive perpendicular strain (E-L) due to end of range (EOR) defects formed in Ge amorphized with 300 keV, 2.5 x 10(15) Ge/cm(2) at liquid nitrogen temperature by means of high-resolution X-ray diffraction. We found that, after complete solid phase epitaxial recrystallization of the amorphous layer (about 1 h at 340 degrees C), only 2% of the original epsilon(perpendicular to) survives. This strain completely disappears after 270 min at 405 degrees C. On the other hand, after this more aggressive annealing. a thin negatively strained layer appears just below the surface. The whole set of data is discussed and compared with existing literature. (C) 2008 Elsevier B.V. All rights reserved.