A review on modelling of carbon nanotube field effect transistors

In this paper we review the issue about the modelling of Carbon NanoTube Field Effect Transistors (CNTFETs), considering also the temperature effects on I-V characteristics of device. In particular we consider a compact, semi-empirical model, already proposed by us, performing I-V characteristic simulations, comparing our results with those obtained with a numerical model online available and obtaining output characteristics comparable but with a lower CPU calculation time.