A comparative study of CNTFET and MOSFET devices through the design of current mirrors

In this review, we present a comparative study of CNTFETs and MOSFET devices, through the design of self-biased cascode current mirror. In particular, the CNTFET used is a C-CNTFET and the MOSFET is in 32 nm technology to have comparable results. All simulations are performed in Advanced Design System, which is compatible the Verilog-A programming language. The obtained results show the overall improvement of the performance of the current mirror based on CNTFET with a higher output resistance without being disadvantaged in terms of current gain.