Publication Date:
1982
abstract:
Self-annealing implantation with dopant ions has been successfully applied to the fabrication of silicon solar cells. Experimental conditions as well as solar cell parameters are presented and discussed.
Iris type:
01.01 Articolo in rivista
List of contributors:
Gabilli, Edgardo; Lotti, Riccardo; Merli, PIER GIORGIO; Nipoti, Roberta; Ostoja, Paolo
Published in: