Charged particle detection properties of epitaxial 4H-SiC Schottky diodes

This work presents measurements of the charge-collection properties of 4H-SiC Schottky diodes under alpha radition and investigates th einfluence of native and alpha induced defects on the detector performance. The contribution of the diffusion of minority carriers to the charge collection efficiency is pointed out. Values of 500 ns and 95 micro-s for the hole and electron life-time, respectively