Data di Pubblicazione:
2007
Abstract:
The quantum conductance of the paradigmatic quasi-one-dimensional In/Si(111) surface system is calculated for 4 x 1, 4 x 2 and 8 x 2 surface reconstructions. In agreement with experiment, we find the recently suggested formation of hexagons within the In nanowires [C. Gonzalez, F. Flores, J. Ortega, Phys. Rev. Lett. 96 (2006) 136101] to drastically modify the electron transport along the In chains. In contrast, the formation of trimers barely changes the quantum conductance.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
In nanowires; silicon surface; density functional calculations; electron transport
Elenco autori:
Calzolari, Arrigo
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