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Spontaneous Raman emission and tunable stokes shift in porous silicon

Conference Paper
Publication Date:
2005
abstract:
In this paper, in order to generate radiation at 1.54 micron, an approach based on Raman scattering in porous silicon is presented. Experimental results, proving spontaneous Raman emission at 1.5 micron and tuning of the Stokes shift, are reported.
Iris type:
04.01 Contributo in Atti di convegno
Keywords:
Raman emission; Porous silicon
List of contributors:
Rendina, Ivo; Sirleto, Luigi; Ferrara, MARIA ANTONIETTA
Authors of the University:
FERRARA MARIA ANTONIETTA
RENDINA IVO
SIRLETO LUIGI
Handle:
https://iris.cnr.it/handle/20.500.14243/307843
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http://www.scopus.com/record/display.url?eid=2-s2.0-33746829472&origin=inward
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