Spontaneous Raman emission and tunable stokes shift in porous silicon

Contributo in Atti di convegno
Data di Pubblicazione:
2005
Abstract:
In this paper, in order to generate radiation at 1.54 micron, an approach based on Raman scattering in porous silicon is presented. Experimental results, proving spontaneous Raman emission at 1.5 micron and tuning of the Stokes shift, are reported.
Tipologia CRIS:
04.01 Contributo in Atti di convegno
Keywords:
Raman emission; Porous silicon
Elenco autori:
Autori di Ateneo:
Link alla scheda completa:
https://iris.cnr.it/handle/20.500.14243/307843