Data di Pubblicazione:
2001
Abstract:
We explored the feasibility of employing strontium titanate (SrTiO3) as semiconducting material in field-effect metal-insulator-semiconductor epitaxial heterostructures. This idea was suggested by the observation of a dramatic effect of the oxygen deficiency on SrTiO3 - ? transport properties, which brings about metallic behavior with low-temperature mobility values comparable with those commonly found for silicon. By pulsed-laser deposition, we realized patterned field-effect devices, showing a resistance enhancement up to 90%. This promising result could open perspectives for crystalline-oxide electronics.
Tipologia CRIS:
01.01 Articolo in rivista
Elenco autori:
Marre', Daniele; Putti, Marina; Siri, Antonio; Pellegrino, Luca; Pallecchi, Ilaria
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