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Mechanical characterization and modeling of different pad structures

Contributo in Atti di convegno
Data di Pubblicazione:
2020
Abstract:
Innovation on semiconductors technology requires enhancements of all actors like adhesion layers, barriers and metal stacks, beyond of semiconductor materials themselves. In general, metallic layers influence the whole die performances. The composition and the layout of these metal layers are fundamental for the signal transmission from the frame to the die and vice versa, and therefore their improvement contributes to the die development in terms of performances and reliability. In the present work, two pad structures have been benchmarked and analyzed under the structural strength standpoint. The experimental comparison among the different pads has been done through a flat punch nanoindentation to highlight the material strength and the crack propagation phenomena. Testing results have been compared to finite element models to analyze the stress through the different layers. The findings of the work demonstrate the validity of the methodology adopted and show the importance of the metallic connections layouts for the stress concentration and crack formation analysis.and the crack propagation phenomena. Testing results have been compared to finite element models to analyze the stress through the different layers. The findings of the work ...
Tipologia CRIS:
04.01 Contributo in Atti di convegno
Keywords:
Stress; Tungsten; Dielectrics; Manganese; Load modeling; Layout
Elenco autori:
D'Arrigo, GIUSEPPE ALESSIO MARIA; Sciuto, Antonella
Autori di Ateneo:
D'ARRIGO GIUSEPPE ALESSIO MARIA
SCIUTO ANTONELLA
Link alla scheda completa:
https://iris.cnr.it/handle/20.500.14243/405752
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