Data di Pubblicazione:
2020
Abstract:
In this paper we present a study of the impact of technology on the CNTFET-based circuits performance. In particular we show the layout of a NOT gate, used as block to build a chain of NOT and a ring oscillator. Then we present the time domain simulations of these circuits in order to see how the parasitic elements could limit the high-speed performances of CNTFETs.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
Time domain analysis; Time-domain simulations; Parasitic element
Elenco autori:
Marani, Roberto
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