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Impact of Technology on CNTFET-Based Circuits Performance

Academic Article
Publication Date:
2020
abstract:
In this paper we present a study of the impact of technology on the CNTFET-based circuits performance. In particular we show the layout of a NOT gate, used as block to build a chain of NOT and a ring oscillator. Then we present the time domain simulations of these circuits in order to see how the parasitic elements could limit the high-speed performances of CNTFETs.
Iris type:
01.01 Articolo in rivista
Keywords:
Time domain analysis; Time-domain simulations; Parasitic element
List of contributors:
Marani, Roberto
Authors of the University:
MARANI ROBERTO
Handle:
https://iris.cnr.it/handle/20.500.14243/446109
Published in:
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
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URL

http://www.scopus.com/record/display.url?eid=2-s2.0-85085842743&origin=inward
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