Organic light emitting field effect transistors based on an ambipolar p-i-n layered structure

A bottom contact/top gate ambipolar " p-i-n " layered light emitting field effect transistor with the active medium inserted between two doped transport layers, is reported. The doping profile results crucial to the capability of emitting light, as well as to the electrical characteristics of the device. In this sense, high output current at relative low applied gate/drain voltage and light emission along the whole large area transistor channel are observed, putting the basis to full integration of organic light emitting field effect transistors in planar complex devices. © 2010 American Institute of Physics.