Effects of fabrication parameters on the electrical stability of gate overlapped lightly doped drain polysilicon thin-film transistors

Academic Article

Publication Date:

2006

abstract:

[object Object]

Iris type:

01.01 Articolo in rivista

Keywords:

Gate overlapped lightly doped drain (GOLDD); Hot carrier effect (HCE); Kink effect; Thin-film transistors (TFTs)

List of contributors:

Authors of the University:

MARIUCCI LUIGI

RAPISARDA MATTEO

VALLETTA ANTONIO

Handle:

Published in:

Journal

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