Effects of fabrication parameters on the electrical stability of gate overlapped lightly doped drain polysilicon thin-film transistors

Articolo
Data di Pubblicazione:
2006
Abstract:
[object Object]
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
Gate overlapped lightly doped drain (GOLDD); Hot carrier effect (HCE); Kink effect; Thin-film transistors (TFTs)
Elenco autori:
Autori di Ateneo:
Link alla scheda completa:
https://iris.cnr.it/handle/20.500.14243/287219
Pubblicato in:
JAPANESE JOURNAL OF APPLIED PHYSICS
Journal