Data di Pubblicazione:
2004
Abstract:
We have investigated the behaviour under accelerated reliability tests of MOS capacitors stressed at high voltage in accumulation with ultra-thin SiO2 dielectrics and with tungsten gates. Standard p+ poly-Si gates are used as reference. In this report, we show and discuss data concerning the oxide wearout and the breakdown transient.
Tipologia CRIS:
01.01 Articolo in rivista
Elenco autori:
Lombardo, SALVATORE ANTONINO
Link alla scheda completa:
Pubblicato in: