Low temperature oxidation of SiC preamorphized by ion implantation

In this article, we investigate the thermal growth of SiO2 films on 6H-SiC preamorphized by Ar+ ion implantation. The experimental conditions to grow oxide layers on SiC with high oxidation rate and low temperature have been determined. Rutherford back scattering channeling, secondary ion mass spectrometry, and x-ray photoelectron spectroscopy analyses have been used to investigate the oxide characteristics and composition. During wet oxidation at 800 degreesC, a linear growth rate of about 0.7 nm/min has been found for layers as thick as 240 nm. The presence of a SiO2Cx transition region between a stoichiometric SiO2 layer and the SiC substrate has been evidenced. The thickness of this transition layer increases with the oxidation time up to reach 118 nm for 390 min.