Formation and evolution of luminescent Si nanoclusters produced by thermal annealing of SiOx films

Si nanoclusters embedded in SiO2 have been produced by thermal annealing of SiOx films prepared by plasma enhanced chemical vapor deposition. The structural properties of the system have been investigated by energy filtered transmission electron microscopy (EFTEM). EFTEM has evidenced the presence of a relevant contribution of amorphous nanostructures, not detectable by using the more conventional dark field transmission electron microscopy technique. By also taking into account this contribution, an accurate quantitative description of the evolution of the samples upon thermal annealing has been accomplished. In particular, the temperatures at which the nucleation of amorphous and crystalline Si nanoclusters starts have been determined. Furthermore, the nanocluster mean radius and density have been determined as a function of the annealing temperature. Finally, the optical and the structural properties of the system have been compared, to demonstrate that the photoluminescence properties of the system depend on both the amorphous and crystalline clusters.