Publication Date:
2002
abstract:
We have performed reflectivity and photoluminescence measurements on a set of InxGa1-xAs | InyGa1-yAs | GaAs(001) stepped/asymmetric quantum wells with an intentionally abrupt change of indium composition (x=0.149
Iris type:
01.01 Articolo in rivista
Keywords:
InGaAs Stepped heterostructures Interface Exciton localization Photoluminescence
List of contributors:
Tomassini, Norberto; Schiumarini, Donatella; Selci, Stefano
Published in: