Data di Pubblicazione:
2002
Abstract:
We have performed reflectivity and photoluminescence measurements on a set of InxGa1-xAs | InyGa1-yAs | GaAs(001) stepped/asymmetric quantum wells with an intentionally abrupt change of indium composition (x=0.149
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
InGaAs Stepped heterostructures Interface Exciton localization Photoluminescence
Elenco autori:
Tomassini, Norberto; Schiumarini, Donatella; Selci, Stefano
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