Characterization of a thermal oxidation process on SiC preamorphized by Ar ion implantation

In this paper we investigate the thermal growth of SiO2 films on Ar+ amorphized 6H-SiC. The experimental conditions to grow oxide layers on SiC with high oxidation rate at low temperature have been determined. Rutherford Back Scattering Channeling (RBS-C), Secondary Ion Mass Spectrometry (SIMS) and X-ray photoelectron spectroscopy (XPS) analyses show the presence of a C rich film at the SiC interface. The thickness of this layer increases as the oxidation time increases so that after 390 min a SiO2Cx transition region as thick as 118 nm has been evidenced between the pure stoichiometric layer of SiO2 and the SiC substrate.