Electron Transport in SiGe Alloy Nanowires in the Ballistic Regime from First-Principles
Academic Article
Publication Date:
2012
abstract:
Silicon-germanium alloying is emerging as one of the most promising strategies to engineer heat transport at the nanoscale. Here, we perform first-principles electron transport calculations to assess at what extent such approach can be followed without worsening the electrical conduction properties of the system, providing then a path toward high-efficiency thermoelectric materials.
Iris type:
01.01 Articolo in rivista
Keywords:
SiGe nanowires; electron transport; DFT; thermoelectrics
List of contributors:
Ossicini, Stefano; Amato, Michele
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