Data di Pubblicazione:
2012
Abstract:
Silicon-germanium alloying is emerging as one of the most promising strategies to engineer heat transport at the nanoscale. Here, we perform first-principles electron transport calculations to assess at what extent such approach can be followed without worsening the electrical conduction properties of the system, providing then a path toward high-efficiency thermoelectric materials.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
SiGe nanowires; electron transport; DFT; thermoelectrics
Elenco autori:
Ossicini, Stefano; Amato, Michele
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