Advanced microsensor technology using porous silicon layers permeated with Sn-V mixed oxides

A novel gas microsensor device realized using PS layer permeated with Sn-V mixed oxides is presented. The PS structure has been optimized to get the best trade-off between electrical insulation, specific surface area and mechanical strength. Moreover, for a conformable coating of the PS inner structure with a thin sensing film, a wet permeation technique has been used to co-precipitate Sn-V mixed oxides that exhibit peculiar catalytic properties towards aromatic hydrocarbons. Results on the morphological, chemical and electrical characterization of the permeated PS layer are presented and discussed.