Ideal unreactive metalÕsemiconductor interfaces: The case of ZnÕZnSe 001

Zn/ZnSe~001! interfaces fabricated by metal deposition at room temperature onto ZnSe~001! c(232), 2 31, and 131 surfaces were studied by means of x-ray photoemission spectroscopy and current-voltage and capacitance-voltage measurements. All junctions exhibited an ideal unreactive behavior and an identical Schottky barrier height of 1.85 eV ~for p-type conduction!. Ab initio pseudopotential calculations for model interface configurations provide a microscopic explanation of the different behavior of Zn/ZnSe junctions as compared to Al/ZnSe and Au/ZnSe junctions.