RTA-INDUCED DEFECTS - A COMPARISON BETWEEN LAMP AND ELECTRON-BEAM TECHNIQUES

Rapid thermal annealing (RTA) techniques are increasingly used in many technological applications. 7"0 date, however, only a limited knowledge exists of the effects induced by' these thermal treatment. s' on the material characteristics. We have studied the deject equilibria in float zone (kZ) and Czochralski zone (CZ) silicon subjected to annealing at 400 °C by employing two different heating techniques, namely electron beam and lamp system. By comparison of the variations induced in the minority carrier lifetime and the crystal quali O' by the two systems an insight into the defects due to the atmeal technique its'elf is obtained.