Roles of local He concentration and Si sample orientation on cavity growth in amorphous silicon

Academic Article

Publication Date:

2011

abstract:

[object Object]

Iris type:

01.01 Articolo in rivista

Keywords:

Amorphous silicon; Cavities; Ion; Positron annihilation; Recrystallisation; Transmission electron microscopy

List of contributors:

Authors of the University:

CANINO MARIACONCETTA

Handle:

Published in:

Journal

URL